Jean-Luc Pelouard
Université Paris-Saclay, France
Title: SWIR photo-detection enhanced by sub-wavelength structuration
Biography
Biography: Jean-Luc Pelouard
Abstract
The extreme light confinement provided by sub-wavelength metal-dielectric structures
pushes towards revisiting the design rules of the photo-detectors. Furthermore,
introducing absorbing layers in optical nano-resonators demands a dedicated
electromagnetic design. Developing together semiconducting heterostructures and
optical nano-antennas opens the way for performance improvements and new
functionalities, introducing very promising features such as ultra-thin absorbing layers
and device area much smaller than its optical cross-section. High responsivity, highspeed
behavior, and carved optical response are among the expected properties of this
new generation of photo-detectors.
In this talk, I present a GMR InGaAs photo-detector dedicated for FPA applications as an
illustration of this global design. I discuss the cross-linked properties of the optical and
semiconductor structures. Experimental results show at λ = 1.55 μm an EQE of 75% and
a specific detectivity of 1013 cm.√Hz.W-1.